Philips buk444-200a-b 1 free download

File name buk444-200a-b_1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 5.3 4.7 A (SMPS), motor control, welding, Ptot Total power dissipation 25 25 W DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state 0.4 0.5 in general purpose switching resistance applications. PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d case 1 gate 2 drain g 3 source case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 200 V VDGR Drain-gate voltage RGS = 20 k - 200 V