KEC ku045n10p free download

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SEMICONDUCTOR KU045N10P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES K VDSS= 100V, ID= 150A Drain-Source ON Resistance : RDS(ON)=4.5m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 20 V @TC=25 150 ID Drain Current @TC=100 94.9 A Pulsed (Note1) IDP 400* Single Pulsed Avalanche Energy EAS 860 mJ (Note 2) Repetitive Avalanche Energy EAR 8.8 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 192 W PD Dissipation Derate above 25 1.54 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 ~ 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.65 /W Thermal Resistance, RthJA 62.5 /W Junction-to-Ambient * : Drain current limited by maximum junction temperature. Calculated continuous Current based on maximum allowable junction temperature PIN CONNECTION 2012. 5. 23 Revision No : 0 1/7 KU045N10P ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 100 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=5mA, Referenced to 25 - 0.09 - V/ Drain Cut-off Current IDSS VDS=100V, VGS=0V,