HT Semiconductor mmst2907a free download

File name mmst2907a.pdf

MMST2907 A TRANSISTOR(PNP) FEATURES SOT-323 Epitaxial planar die construction Complementary PNP Type available(MMST2222A) MARKING:K3F 1. BASE MAXIMUM RATINGS(TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Dissipation 0.2 W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Collector cut-off current ICES VCB=-30V,IB=0 -100 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -100 nA hFE(1) VCE=-10V,IC=-0.1mA 75 hFE(2) VCE=-10V,IC=-1mA 100 DC current gain hFE(3) VCE=-10V,IC=-10mA 100 hFE(4) VCE=-10V,IC=-150mA 100 300 hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat) IC=-150mA,IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1.6 V VBE(sat) IC=-150mA