LGE mmdt4403 free download

File name mmdt4403.pdf

MMDT4403 SOT-363 Dual Transistor (PNP) SOT-363 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.2 W RJA Thermal Resistance. Junction to Ambient Air 625 /W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-35V, IB=0 -0.5 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A hFE(1) VCE=-1V, IC= -0.1mA 30 hFE(2) VCE=-1V, IC= -1mA 60 DC current gain hFE(3) VCE=-1 V, IC= -10mA 100 hFE(4) VCE=-2 V, IC= -150mA 100 300 hFE(5) VCE=-2 V, IC= -500mA 20 VCE(sat)1 IC=-150 mA, IB=-15mA -0