KEC ku024n06p free download

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SEMICONDUCTOR KU024N06P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES K VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V @TC=25 200* ID Drain Current @TC=100 126 A Pulsed (Note1) IDP 504* Single Pulsed Avalanche Energy EAS 1,500 mJ (Note 2) Repetitive Avalanche Energy EAR 20 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 192 W PD Dissipation Derate above 25 1.54 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 ~ 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.65 /W Thermal Resistance, RthJA 62.5 /W Junction-to-Ambient * : Drain current limited by maximum junction temperature. Calculated continuous Current based on maximum allowable junction temperature PIN CONNECTION 2012. 5. 14 Revision No : 0 1/7 KU024N06P ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 60 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=5mA, Referenced to 25 - 0.06 - V/ Drain Cut-off Current IDSS VDS=60V, VGS=0V,