Secos sid10n30-600i free download

File name sid10n30-600i.pdf

SID10N30-600I 7.5A, 300V, RDS(ON) 600 m Elektronische Bauelemente N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free DESCRIPTION TO-251P The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe A DPAK saves board space B C D Fast switching speed. High performance trench technology. GE APPLICATION K DC-DC converters, power management in portable and F H battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. M J P Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 6.40 6.80 G 6.00 6.30 B 5.20 5.50 H 0.90 1.50