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STS11NF30L N-channel 30V - 0.0085 - 11A SO-8 Low gate charge STripFETTM II Power MOSFET General features Type VDSS RDS(on) ID STS11NF30L 30V <0.009 11A Optimal RDS(on) x Qg trade-off Conduction losses reduced Description S0-8 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a Internal schematic diagram remarkable manufacturing reproducibility. Applications Switching application Order codes Part number Marking Package Packaging STS11NF30L 11F30L- SO-8 Tape & reel January 2007 Rev 11 1/12 www.st.com 12 Contents STS11NF30L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS11NF30L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage