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Descr: . Electronic Components Datasheets Active components Transistors Philips but11f_1.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 850 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths 25

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