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Descr: . Electronic Components Datasheets Active components Transistors LGE mmdt2907a.pdf
Group:Electronics > Components > Transistors
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MMDT2907A SOT-363 Transistor(PNP) SOT-363 Features Complementary NPN Type available MMDT2222A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 MARKING: K2F ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -10A, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -10 nA Collector cut-off current ICEX VCE=-30V,VEB(Off)=-0.5V -50 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -10 nA hFE(1) VCE=-10V, IC= -0.1mA 75 hFE(2) VCE=-10V, IC= -1mA 100 DC current gain hFE(3) VCE=-10V, IC=-10mA 100 hFE(4) VCE=-10V, IC= -150mA 100 300 hFE(5) VCE=-10V, IC=-500mA 50 VCE(sat)1 IC=-150mA, IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat)2 IC=-500mA, IB=- 50mA -1.6 V VBE(sat)1 IC=-150mA, IB=-15mA -1.3 V Base-emitter saturation voltage VBE(sat)2 IC=-500mA, IB= -50mA -2.6 V Transition frequency fT VCE=-20V, IC= -50mA,f=100MHz 200 MHz Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 8 pF

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