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BDY90P NPN SILICON POWER TRANSISTOR s NPN TRANSISTOR s LOW COLLECTOR EMITTER SATURATION VOLTAGE s FAST-SWITCHING SPEED APPLICATION s GENERAL PURPOSE SWITCHING APPLICATIONS s GENERAL PURPOSE AMPLIFIERS 3 s DC CURRENT AND BATTERY OPERATED 2 1 ELECTRONIC BALLAST DESCRIPTION TO-220 The BDY90P is a silicon multiepitaxial planar NPN power transistors in TO-220 case intented for use in switching, linear applications and emergency lighting. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 100 V V CEV Collector-emitter Voltage (V BE = -1.5V) 100 V V CEO Collector-emitter Voltage (I B = 0) 80 V V EBO Emitter-base Voltage (I C = 0) 6 V IC Collector Current 10 A I CM Collector Peak Current (repetitive) 15 A IB Base Current 2 A P tot Total Dissipation at T c 25 o C 60 W o T stg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 150 C June 1997 1/4 BDY90P THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 2.08 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CE =V CBO 1 mA Current (I E = 0) I CEV Collector Cut-off V CE =V CEV 1 mA Current (V BE = -1.5V) T case = 150 o C