ST stl7nm60n free download

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STL7NM60N N-channel 600 V, 0.805 5.8 A PowerFLATTM (5x5) , MDmeshTM II Power MOSFET Features VDSS @ RDS(on) Order code ID TJMAX max. STL7NM60N 650 V < 0.90 5.8 A(1) 1. The value is rated according Rthj-case 100% avalanche tested Low input capacitance and gate charge Low gate input resistance PowerFLAT (5x5) Application Switching applications Description Figure 1. Internal schematic diagram These devices are made using the second D D D generation of MDmeshTM technology. This 14 13 12 11 G revolutionary Power MOSFET associates a new Pin 1 vertical structure to the company's strip layout to (not connected) yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most S 2 10 S Drain demanding high efficiency converters. S 3 9 S S 4 8 S 5 6 7 D D D Table 1. Device summary Order code Marking Package Packaging STL7NM60N 7NM60N PowerFLATTM (5x5) Tape and reel January 2011 Doc ID 18348 Rev 1 1/12 www.st.com 12 Contents STL7NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (cu