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Descr: . Electronic Components Datasheets Active components Transistors KEC ku390n10p.pdf
Group:Electronics > Components > Transistors
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SEMICONDUCTOR KU390N10P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast TENTATIVE switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, A O Synchronous Rectification and a load switch in battery powered C applications F E G DIM MILLIMETERS A _ 9.9 + 0.2 FEATURES B B 15.95 MAX VDSS= 100V, ID= 40A Q C 1.3+0.1/-0.05 I D _ 0.8 + 0.1 Drain-Source ON Resistance : E _ 3.6 + 0.2 RDS(ON)=39m (Max.) @VGS = 10V K P F _ 2.8 + 0.1 M G 3.7

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