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Descr: . Electronic Components Datasheets Active components Transistors CET ceh3456.pdf
Group:Electronics > Components > Transistors
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CEH3456 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.5A, RDS(ON) = 42m @VGS = 10V. RDS(ON) = 59m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 TSOP-6 S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS

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