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Descr: . Electronic Components Datasheets Active components Transistors GSME mmbt3904.pdf
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Guilin Strong Micro-Electronics Co.,Ltd. GM3904( MMBT3904) MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 6.0 Vdc - Collector Current-Continuous Ic 200 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation 225 mW FR-5 Board(1) PD TA=25 25 1.8 mW/ Derate above25 25 Total Device Dissipation 300 mW Alumina Substrate, (2) PD TA=25 25 2.4 mW/ Derate above25 25 Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg 150, -55to+150 DEVICE MARKING GM3904(MMBT3904)=1AM GM3904(MMBT3904)=1AM (MMBT3904)=1 Guilin Strong Micro-Electronics Co.,Ltd. GM3904( MMBT3904) ELECTRICAL CHARACTERISTICS (TA=25 25 unless otherwise noted 25) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) V(BR)CEO 40 -- Vdc -(Ic=1.0mAdc,IB=0) Collector-Base Breakdown Voltage V(BR)CBO 60 -- Vdc -(Ic=10Adc,IE=0) Emitter-Base Breakdown Voltage V(BR)EBO 6.0 -- Vdc -(IE=10Adc,Ic=0) Base Cutoff Current IBEX -- 50 nAdc (VCE=30Vdc, VEB =3.0 Vdc) Collector Cutoff Current ICEX -- 50 nAdc (VCE=30Vdc, VEB =3.0Vdc) ON CHARCTERISTICS(2) CHARCTERISTICS(2) Characteristic Symbol Min Max Unit DC Current Gain hPE -- (Ic=0.1mAdc,VCE=1.0Vdc) 40 -- (Ic=1.0mAdc,VCE=1.0Vdc) 70 -- (Ic=10mAdc,VCE=1.0Vdc) 100 300 (Ic=50mAdc,VCE=1.0Vdc) 60 -- (Ic=100mAdc,VCE=1.0Vdc) 30 -- Collector-Emitter Saturation Voltage -

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