KEC kf9n50p-f free download

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SEMICONDUCTOR KF9N50P/F N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF9N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent DIM avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 9A RDS(ON)=0.75 (Max) @VGS =10V Qg(typ.) =19nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL UNIT KF9N50P KF9N50F Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V KF9N50F @TC=25 9 9* ID Drain Current @TC=100 5.5 5.5* A Pulsed (Note1) IDP 24 24* Single Pulsed Avalanche Energy EAS 200 mJ (Note 2) Repetitive Avalanche Energy EAR 4 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 125 44.6 W PD Dissipation Derate above25 1.0 0.36 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.0 2.8 /W Thermal Resistance, Junction-to- RthJA 62.5 62.5 /W Ambient * : Drain current limited by maximum junction temperature. PIN CONNECTION 2010. 12. 20 Revision No : 0 1/2 KF9N50P/F ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC