LGE 2sb1274 free download

File name 2sb1274.pdf

2SB1274(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 Features 1 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-1mA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-5mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -6 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A hFE(1) VCE=-5V, IC=-500mA 70 280 DC current gain hFE(2) VCE=-5V, IC=-3A 20 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-200mA -1 V Base-emitter voltage VBE VCE=-5V, IC=-500mA -1 V Transition frequency