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File name: | buk9606-55a_1.pdf [preview buk9606-55a 1] |
Size: | 56 kB |
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Mfg: | Philips |
Model: | buk9606-55a 1 🔎 |
Original: | buk9606-55a 1 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Philips buk9606-55a_1.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 09-07-2020 |
User: | Anonymous |
Multipart: | No multipart |
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Extracted files: | 1 | |
File name buk9606-55a_1.pdf Philips Semiconductors Product specification TrenchMOSTM transistor BUK9606-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using 'trench' technology ID Drain current (DC) 75 A the device features very low on-state Ptot Total power dissipation 230 W resistance. It is intended for use in Tj Junction temperature 175 |
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