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File name: | bfq17_cnv_2.pdf [preview bfq17 cnv 2] |
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Descr: | . Electronic Components Datasheets Active components Transistors Philips bfq17_cnv_2.pdf |
Group: | Electronics > Components > Transistors |
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File name bfq17_cnv_2.pdf DISCRETE SEMICONDUCTORS DATA SHEET BFQ17 NPN 1 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 DESCRIPTION PINNING NPN transistor in a SOT89 plastic PIN DESCRIPTION envelope intended for application in Code: FA thick and thin-film circuits. The 1 emitter page transistor has extremely good intermodulation properties and a high 2 collector power gain. 3 base 1 2 3 Bottom view MBK514 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 25 V ICM peak collector current - 300 mA Ptot total power dissipation up to Ts = 145 |
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