KEC ku2311k free download

File name ku2311k.pdf

SEMICONDUCTOR KU2311K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=97A. Low Drain to Source On-state Resistance. : RDS(ON)=5.0m (Max.) @ VGS=10V : RDS(ON)=8.0m (Max.) @ VGS=4.5V MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS 20 V DC@TC=25 (Note1) ID 97 Drain Current A MARKING Pulsed (Note2) IDP 388 Single Pulsed Avalanche Energy (Note3) EAS 583 mJ @TC=25 (Note1) 78 Drain Power Dissipation PD W @Ta=25 (Note2) 2.5 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Case (Note1) RthJC 1.6 /W Thermal Resistance, Junction to Ambient (Note2) RthJA 50 /W Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1 1 Pad of 2 oz copper. Note 3) L=62.0 H, IAS=97A, VDD=15V, VGS=10V, Starting Tj=25 PIN CONNECTION (TOP VIEW) 2009. 11. 10 Revision No : 0 1/4 KU2311K ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 30 - - V Drain Cut-off Current IDSS VGS=0V, VDS=30V - - 1 A Gate to Source Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 V VGS=10V, ID=20A (Note4) - 4.0 5.0 Drain