HT Semiconductor emd6 free download

File name emd6.pdf

EMD6 DIGITAL TRANSISTOR (NPN+ PNP) FEATURES SOT-563 DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. 1 Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. External circuit MARKING:D6 Absolute maximum ratings(Ta=25) Parameter Symbol Limits Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55~150 Electrical characteristics (Ta=25) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V IC=50A Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50A Collector cut-off current ICBO 0.5 A VCB=50V Emitter cut-off current IEBO 0.5 A VEB=4V Collector-emitter saturation voltage VCE(sat) 0.3 V IC=5mA,IB=0.25mA DC current transfer ratio hFE 100 600 VCE=5V,IC=1mA Input resistance R1 3.29 4.7 6.11 K Transition frequency fT 250 MHz VCE=10V ,IE=-5mA,f=100MHz 1 JinYu www.htsemi.com semiconductor Date:2011/ 05