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SEMICONDUCTOR KF12N60P/F N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=12A Drain-Source ON Resistance : RDS(ON)=0.6 (Max) @VGS=10V Qg(typ.)= 36nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL UNIT KF12N60P KF12N60F Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V @TC=25 12 12* ID Drain Current @TC=100 7.4 7.4* A KF12N60F Pulsed (Note1) IDP 33 33* Single Pulsed Avalanche Energy EAS 450 mJ (Note 2) Repetitive Avalanche Energy EAR 17 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 215 49.8 W PD Dissipation Derate above 25 1.72 0.4 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.58 2.51 /W Thermal Resistance, RthJA 62.5 62.5 /W Junction-to-Ambient * : Drain current limited by maximum junction temperature. EQUIVALENT CIRCUIT 2010. 8. 12 Revision No : 3 1/7 KF12N60P/F ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source