KEC kmb8d0p30q free download

File name kmb8d0p30q.pdf

SEMICONDUCTOR KMB8D0P30Q TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for battery power management in cell phone, PDA and notebook H T D P G L FEATURES VDSS=-30V, ID=-8A. Low Drain-Source ON Resistance. A : RDS(ON)=20m (Max.) @ VGS=-10V DIM MILLIMETERS A 5.05+0.25/-0.20 : RDS(ON)=35m (Max.) @ VGS=-4.5V _ B1 3.90 + 0.3 Super High Dense Cell Design for Extremely Low RDS(ON) 8 5 B2 _ 6.00 + 0.4 D _ 0.42 + 0.1 B1 B2 G _ 0.15 + 0.1 H _ 1.4 + 0.2 1 4 L _ 0.5 + 0.2 P 1.27 Typ. T _ 0.20 + 0.05 MAXIMUM RATING (Ta=25 )