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2SC2216(NPN) TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Dissipation 300 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 4 V Collector cut-off current ICBO VCB=50 V IE=0 0.1 A Emitter cut-off current IEBO VEB= 3 V, IC=0 0.1 A DC current gain hFE VCE=12.5V, IC=12.5 mA 40 140 Collector-emitter saturation voltage VCE (sat) IC= 15mA, IB=1.5 mA 0.2 V Bass-emitter saturation voltage VBE (sat) IC= 15mA, IB=1.5 mA 1.5 V Transition frequency fT VCE=12.5 V, IC=12.5mA 300 MHz VCB=10V,IE=0, Collector output capacitance Cob 2.0 pF f=30MHz 2SC2216(NPN) TO-92 Bipolar Transistors Typical Characteristics