KEC khb1d0n60g free download

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SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. FEATURES VDSS= 600V, ID= 0.4A Drain-Source ON Resistance : RDS(ON)=6.5 (Typ.), @VGS = 10V MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V DC ID 0.4 A Drain Current Pulsed (Note1) IDP 1.6 A Single Pulsed Avalanche Energy (Note 2) EAS 25 mJ Drain-Source Diode Forward Current IS 0.4 A Drain Power Dissipation (TC=25 ) PD 3 W Maximum Junction Temperature Tj -55~150 Storage Temperature Range Tstg -55~150 Thermal Characteristics Thermal Resistance, Junction-to-Ambient RthJA 120 /W Note 1) Pulse Test : Pulse width 10 , Duty cycle 1% Note 2) Starting Tj=25 , ID=1A, VDD=50V Equivalent Circuit 2008. 5. 8 Revision No : 2 1/6 KHB1D0N60G MOSFET ELECTRICAL CHARACTERISTICS (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 100 A Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.5A - 6.5 8 Forward Transconductance gFS VDS=15V, ID=0.5A - 1 - S Dynamic Input Capacitance Ciss - 156 - Output Capacitance