KEC kmb010p30qa free download

File name kmb010p30qa.pdf

SEMICONDUCTOR KMB010P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. H T D P G L FEATURES VDSS=-30V, ID=-10A. A DIM MILLIMETERS Drain-Source ON Resistance. A _ 4.85 + 0.2 B1 _ 3.94 + 0.2 RDS(ON)=20m (Max.) @ VGS=-10V B2 _ 8 5 6.02 + 0.3 RDS(ON)=28m (Max.) @ VGS=-4.5V D _ 0.4 + 0.1 B1 B2 G 0.15+0.1/-0.05 Super High Dense Cell Design H _ 1.63 + 0.2 1 4 L _ 0.65 + 0.2