HT Semiconductor 2sa1201 free download

File name 2sa1201.pdf

2SA1 201 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES High voltage High transition frequency 2. COLLECTOR 1 Complementary to 2SC2881 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.8 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-120V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A DC current gain hFE VCE=-5V,IC=-100mA 80 240 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1 V Base-emitter voltage VBE VCE=-5V,IC=-500mA -1 V Transition frequency fT VCE=-5V,IC=-100mA 120 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 30 pF CLASSIFICATION OF hFE Rank O Y Range 80-160 120-240 Marking DO