HT Semiconductor s9012 free download

File name s9012.pdf

S901 2 SOT-23 TRANSISTOR(PNP) FEATURES Complementary to S9013 1. BASE 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A DC current gain hFE VCE=-1V, IC= -50mA 120 400 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V VCE=-6V, IC= -20mA Transition frequency fT