LGE bc635-637-639 free download

File name bc635-637-639.pdf

BC635/637/639(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 V VCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 Tstg Storage Temperature -65-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT IC=10mA, IB=0 BC635 45 V Collector-emitter breakdown voltage V(BR)CEO BC637 60 V BC639 80 V Collector cut-off current ICBO VCB= 30 V,IE=0 0.1 A Emitter cut-off current IEBO VEB=5V, IB=0