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File name: | ap83t02gh-hf.pdf [preview ap83t02gh-hf] |
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Model: | ap83t02gh-hf 🔎 ap83t02ghhf |
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Descr: | . Electronic Components Datasheets Various ap83t02gh-hf.pdf |
Group: | Electronics > Other |
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File name ap83t02gh-hf.pdf AP83T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 25V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP83T02GJ) is G available for low-profile applications. D S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, V GS @ 10V 75 A ID@TC=100 Continuous Drain Current, V GS @ 10V 53 A 1 IDM Pulsed Drain Current 240 A PD@TC=25 Total Power Dissipation 60 W 3 PD@TA=25 Total Power Dissipation 2.4 W TSTG Storage Temperature Range -55 to 175 TJ Operating Junction Temperature Range -55 to 175 Thermal Data |
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