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2SC1318(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 750 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =10A,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 70 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 A hFE(1) VCE=10V,IC=150mA 85 340 DC current gain hFE(2) VCE=10V,IC=500mA 40 Collector-emitter saturation voltage VCE(sat) IC=300mA,IB=30mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=300mA,IB=30mA 1.5 V Transition frequency fT VCE=10V,IC=50mA,f=200MHz 120 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 11 20 pF CLASSIFICATION OF hFE(1) Rank Q R S Range 85-170 120-240 170-340 2SC1318(NPN) TO-92 Bipolar Transistors Typical Characteristics