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Model:2sb1182 🔎
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Descr: . Electronic Components Datasheets Active components Transistors LGE 2sb1182.pdf
Group:Electronics > Components > Transistors
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2SB1182(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50

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