ST sts20n3llh6 free download

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STS20N3LLH6 N-channel 30 V, 0.004 , 20 A, SO-8 STripFETTM VI DeepGATETM Power MOSFET Features RDS(on) Type VDSS ID max STS20N3LLH6 30 V 0.0047 20 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness SO-8 Low gate drive power losses Very low switching gate charge Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST's proprietary STripFETTM technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order code Marking Package Packaging STS20N3LLH6 20G3L SO-8 Tape and reel March 2010 Doc ID 15528 Rev 2 1/13 www.st.com 13 Contents STS20N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID 15528 Rev 2 STS20N3LLH6 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS(1) Gate-source voltage