Various ME3424 - N-Channel 30-V (D-S) MOSFET free download

File name ME3424 - N-Channel 30-V (D-S) MOSFET.pdf

ME3424 N-Channel 30-V (D-S) MOSFET FEATURES GENERAL DESCRIPTION RDS(ON)28m @VGS=10V The ME3424 is the N-Channel logic enhancement mode power field RDS(ON)42m @VGS=4.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to Exceptional on-resistance and maximum DC current minimize on-state resistance. These devices are particularly suited capability for low voltage application such as cellular phone and notebook APPLICATIONS computer power management and other battery powered circuits Power Management in Note book where high-side switching , and low in-line power loss are needed in Portable Equipment Load Switch a very small outline surface mount package. PIN CONFIGURATION (TSOP-6) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol 10sec SteadyState Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS