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2SC2999 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 123 Features High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 30 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 Tstg Storage Temperature -40-125 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 3 V Collector cut-off current ICBO VCB=10V, IE=0 0.1 A Emitter cut-off current IEBO VEB=3V,IC=0 0.1 A DC current gain hFE VCE=6V, IC=1mA 40 200 Transition frequency fT VCE=6V, IC=4mA 450 750 MHz Reverse Transfer Capacitance Cre VCB=6V, f=1MHz 0.6 0.9 pF Base-to-Collector Time Constant rbb'cc VCE=6V, IC=1mA,,f=31.9MHZ 19 ps Noise figure NF VCE=6V, IC=1mA,,f=100MHZ 2.2 dB CLASSIFICATION OF hFE Rank C D E Range 40-80 60-120 100-200 2SC2999 TO-9