Supertex tc6215 free download

File name tc6215.pdf

TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description Back to back gate-source Zener diodes The Supertex TC6215 consists of high voltage, low threshold N-channel Guaranteed RDS(ON) at 4.0V gate drive and P-channel MOSFETs in an 8-Lead SOIC (TG) package. Both Low threshold MOSFETs have integrated back to back gate-source Zener diode clamps Low on-resistance and guaranteed RDS(ON) ratings down to 4.0V gate drive allowing them to Independent N- and P-channels be driven directly with standard 5.0V CMOS logic. Electrically isolated N- and P-channels Low input capacitance These low threshold enhancement-mode (normally-off) transistors utilize Fast switching speeds an advanced vertical DMOS structure and Supertex's well-proven silicon- Free from secondary breakdowns gate manufacturing process. This combination produces devices with the Low input and output leakage power handling capabilities of bipolar transistors and with the high input Applications impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal High voltage pulsers runaway and thermally-induced secondary breakdown. Amplifiers Buffers Supertex's vertical DMOS FETs are ideally suited to a wide range of Piezoelectric transducer drivers switching and amplifying applications where very low threshold voltage, General purpose line drivers high breakdown voltage, high input impedance, low input capacitance, Logic level interfaces and fast switching speeds are desired. Ordering Information