WingShing 2sd820 free download

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2SD820 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope , primarily for use in switching power circuites of colour television receivers TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) - 5 A ICM Collector current peak value - A Ptot Total power dissipation Tmb 25 - 50 W VCEsat Collector-emitter saturation voltage IC = 4.0A; IB = 0.8A 5 V Icsat Collector saturation current f = 16KHz - A VF Diode forward voltage V tf Fall time ICsat = 4.0A; f = 16KHz 1.0 s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) 5 A ICM Collector current peak value - A IB Base current (DC) - 1 A IBM Base current peak value - A Ptot Total power dissipation Tmb 25 - 50 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT ICE Collector-emitter cut-off current VBE = 0V; VCE = VCESMmax - 0.1