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STD25NF10 N-channel 100V - 0.033 - 25A - DPAK Low gate charge STripFETTM II Power MOSFET General features Type VDSS RDS(on) ID STD25NF10 100V < 0.038 25A Exceptional dv/dt capability 3 Application oriented characterization 1 100% avalanche tested Application oriented characterization DPAK Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore Internal schematic diagram suitable as primary switch in advanced high- efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Applications Switching application Order codes Part number Marking Package Packaging STD25NF10T4 D25NF10 DPAK Tape & reel July 2006 Rev 4 1/13 www.st.com 13 Contents STD25NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STD25NF10 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VDGR Drain-gate voltage (RGS = 20 k) 100 V VGS Gate- source voltage