LGE mmdt3906 free download

File name mmdt3906.pdf

MMDT3906 SOT-363 Dual Transistor(PNP) SOT-363 Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K3N Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.2 W RJA Thermal Resistance. Junction to Ambient Air 625 /W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS(Tamb=25unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V Collector cut-off current ICEX VCE=-30V,VEB(OFF)=-3V -50 nA Base cut-off current IEBO VEB=-5V,IC=0 -50 nA hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 DC current gain hFE(3) VCE=-1V,IC=-10mA 100 300 hFE(4) VCE=-1V,IC=-50mA 60 hFE(5) VCE=-1V,IC=-100mA 30