HT Semiconductor 2sc4097 free download

File name 2sc4097.pdf

2SC4097 TRANSISTOR (NPN) SOT-323 FEATURES 3 High ICMax. ICMax=0.5A 1 Low VCE(sat).Optimal for low voltage operation. 2 Complements the 2SA1577 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 1 A Emitter cut-off current IEBO VEB=4V,IC=0 1 A DC current gain hFE VCE=3V,IC=10mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.4 V Transition frequency fT VCE=5V, IC=20mA,f =100MHz 250 MHz Collector Output Capacitance Cob VCB=10V,IE=0,f=1MHZ 6 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180