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2SB624 TRANSISTOR(PNP) SOT-23 1.BASE FEATURES 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -700 mA PD Total Device Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V Collector cut-off current ICBO VCB=-30 V , IE=0 -0.1 A Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 A hFE(1)* VCE= -1V, IC= -100mA 110 400 DC current gain hFE(2)* VCE=-1V, IC= -700mA 50 Collector-emitter saturation voltage VCE(sat) * IC=-700 mA, IB= -70mA -0.6 V Base-emitter voltage VBE* VCE=-6V, IC=-10mA -0.6 -0.7 V Transition frequency fT VCE= -6V, IC= -10mA 160 MHz Collector Output Capacitance Cob VCB=-6V,IE=0,f=1MHZ 17 pF * Pulse test : Pulse width 350s,Duty Cycle2%. CLASSIFICATION OF hFE(1) Marking BV1 BV2 BV3 B