File information: | |
File name: | am1011,070.pdf [preview am1011,070] |
Size: | 43 kB |
Extension: | |
Mfg: | ST |
Model: | am1011,070 🔎 |
Original: | am1011,070 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST am1011,070.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 19-07-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name am1011,070.pdf AM1011-070 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED LOW THERMAL RESISTANCE . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE P OUT = 70 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE BRANDING AM1011-70 1011-70 DESCRIPTION PIN CONNECTION The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and is capable of withstanding severe output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM1011-070 is supplied in the AMPACTM Her- 1. Collector 3. Emitter metic M etal/Ceramic package with i nternal 2. Base 4. Base Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 |
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