KEC kma3d6n20sa free download

File name kma3d6n20sa.pdf

SEMICONDUCTOR KMA3D6N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching E time, low on resistance, low gate charge and excellent avalanche L B L characteristics. It is mainly suitable for portable equipment. DIM MILLIMETERS _ A 2.93 + 0.20 B 1.30+0.20/-0.15 C 1.30 MAX D 2 3 D 0.40+0.15/-0.05 A G FEATURES E 2.40+0.30/-0.20 H 1 G 1.90 VDSS=20V, ID=3.6A H 0.95 J 0.13+0.10/-0.05 Drain-Source ON Resistance K 0.00 ~ 0.10 RDS(ON)=60m (Max.) @ VGS=4.5V L 0.55 P P