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A44(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.2 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector cut-off current ICBO VCB=400 V, IE=0 0.1 A Collector cut-off current ICEO VCE=400 V 5 A Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 A hFE (1) VCE=10V , IC=10mA 80 300 hFE(2) VCE=10V, IC=1mA 70 DC current gain hFE(3) VCE=10V, IC=100mA 40 hFE(4) VCE=10V, IC=50mA 80 VCE(sat) IC=10mA, IB=1mA 0.2 V Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter sataration voltage VBE(sat) IC=10mA, IB= 1mA