HT Semiconductor cxt5551 free download

File name cxt5551.pdf

CXT5551 TRANSISTOR (NPN) SOT-89 FEATURES Switching and amplification in high voltage Applications such as telephony 1 1. BASE Low current(max. 600mA) 2. COLLECTOR High voltage(max.180v) 3. EMITTER Marking: 1G6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -65-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100 A,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10 A,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 50 nA Emitter cut-off current IEBO VEB=4V,IC=0 50 nA hFE(1) VCE=5V,IC=1mA 80 DC current gain hFE(2) VCE=5V,IC=10mA 80 300 hFE(3) VCE=5V,IC=50mA 30 VCE(sat) IC=10mA,IB=1mA 0.15 V Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.2 V VBE(sat) IC=10mA,IB=1mA 1 V Base-emitter voltage