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STS14N3LLH5 N-channel 30 V, 0.005 , 14 A, SO-8 STripFETTM V Power MOSFET Features Type VDSS RDS(on) ID STS14N3LLH5 30 V <0.006 14 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) SO-8 Very low switching gate charge High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST's proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in SO-8 package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging STS14N3LLH5 14D3L SO-8 Tape and reel November 2009 Doc ID 14166 Rev 4 1/12 www.st.com 12 Contents STS14N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 14166 Rev 4 STS14N3LLH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage