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File name: | fmmt591.pdf [preview fmmt591] |
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Mfg: | LGE |
Model: | fmmt591 🔎 |
Original: | fmmt591 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors LGE fmmt591.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 23-07-2020 |
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File name fmmt591.pdf FMMT591 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 500 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO1 IC=-10mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A hFE(1) VCE=-5V, IC=-1mA 100 hFE(2) 1 VCE=-5V, IC=-500mA 100 300 DC current gain hFE(3) 1 VCE=-5V, IC=-1A 80 hFE(4) 1 VCE=-5V, IC=-2A 15 1 VCE(sat)1 IC=-500mA, IB=-50mA -0.3 V Collector-emitter saturation voltage VCE(sat)2 1 IC=-1A, IB=-100mA -0.6 V Base-emitter saturation voltage VBE(sat) 1 IC=-1A, IB=-100mA |
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