HT Semiconductor ktc4379 free download

File name ktc4379.pdf

KTC4379 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low saturation voltage High speed switching time 2. COLLECTOR 1 Complementary to KTA1666 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A hFE(1) VCE=2V, IC=500mA 70 240 DC current gain hFE(2) VCE=2V, IC=1.5A 40 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 V Transition frequency fT VCE=2V, IC=500mA 120 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF