KEC ku310n10d free download

File name ku310n10d.pdf

SEMICONDUCTOR KU310N10D TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 27A Drain-Source ON Resistance : RDS(ON)=31m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 20 V @TC=25 27 ID Drain Current @TC=100 17 A Pulsed (Note1) IDP 110* Single Pulsed Avalanche Energy EAS 60 mJ (Note 2) Repetitive Avalanche Energy EAR 2.3 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 52 W PD Dissipation Derate above 25 0.42 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 ~ 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 2.4 /W Thermal Resistance, RthJA 110 /W Junction-to-Ambient * : Drain current limited by maximum junction temperature. PIN CONNECTION 2012. 7. 6 Revision No : 2 1/7 KU310N10D ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 100 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=5mA, Referenced to 25 - 0.10 - V/ Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V Gate Leakage Current