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AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED :1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE BRANDING AM1517-025 1517-25 PIN CONNECTION DESCRIPTION The AM1517-025 power transistor is designed spe- cifically for Satellite communications applications in the 1.5 - 1.7 GHz frequency range. The device is capable of withstanding any mis- match load condition at any phase angle (VSWR :1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a Refactory/Gold metallization system. The AM1517-025 is supplied in the AMPACTM Her- 1. Collector 3. Emitter metic/Ceramic package with internal Input/Output 2. Base 4. Base matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25