KEC 2n5401c free download

File name 2n5401c.pdf

SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES A High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N DIM MILLIMETERS E A 4.70 MAX K Low Leakage Current. G B 4.80 MAX D C 3.70 MAX : ICBO=-50nA(Max.) @VCB=-120V J D 0.45 E 1.00 Low Saturation Voltage F 1.27 : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA G 0.85 H 0.45 Low Noise : NF=8dB (Max.) H J _ 14.00 + 0.50 F F K 0.55 MAX L 2.30 M 0.45 MAX N 1.00